Barabash, R. I., C. Kirchlechner, O. Robach, O. Ulrich, J. S. Micha, A. Sozinov and O. M. Barabash: In-situ observation of stress-induced stochastic twin boundary motion in off stoichiometric NiMnGa single crystals. In: Applied Physics Letters 103, 2, 021909-1-021909-5 (2013).
doi: 10.1063/1.4813440
Wang, L., R. I. Barabash, Y. Yang, T. R. Bieler, M. A. Crimp, P. Eisenlohr, W. Liu and G. E. Ice: Experimental Characterization and Crystal Plasticity Modeling of Heterogeneous Deformation in Polycrystalline α-Ti. In: Metallurgical and Materials Transactions A 42, 3, 626-635 (2011).
doi: 10.1007/s11661-010-0249-8
Barabash, R. I., G. E. Ice, N. Tamura, B. C. Valek, J. C. Bravman, R. Spolenak and J. R. Patel: Quantitative characterization of electromigration-induced plastic deformation in Al(0.5wt%Cu) interconnect. In: Microelectronic Engineering 75, 1, 24-30 (2004).
Barabash, R. I., G. E. Ice, N. Tamura, B. C. Valek, R. Spolenak, J. C. Bravman and J. R. Patel: Coupling between precipitation and plastic deformation during electromigration in a passivated Al (0.5wt%Cu) interconnect. In: Materials, Technology, Annealability for Advanced Interconnects and Low-k Dieelectrics, (Eds.) Carter, R.; Hau-Riege, C.; Kloster, G.; Lu, T-M.; Schulz, S.;. Materials Research Society Symposium Proceedings 812. Materials Research Society (2004) F7.4.1-F7.4.10.
Barabash, R. I., G. E. Ice, N. Tamura, B. C. Valek, J. C. Bravman, R. Spolenak and J. R. Patel: Quantitative analysis of dislocation arrangements induced by electromigration in a passivated Al (0.5 wt % Cu) interconnect. In: Journal of Applied Physics 93, 9, 5701-5706 (2003).
Barabash, R. I., G. E Ice, N. Tamura, B. C. Valek, R. Spolenak and R. Patel: Spatially resolved characterization of electromigration-induced plastic deformation in Al(0.5wt% Cu) interconnect. In: Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures, (Eds.) Pinqueras, J. Materials Research Society Symposium Proceedings. MRS, Warrendale, Pa. (2003) G13.1.1-G13.1.6.
Barabash, R. I., G. E. Ice, N. Tamura, B. C. Valek, J. C. Bravman, R. Spolenak and J. R. Patel: Quantitative characterization of dislocation structure coupled with electromigration in a passivated Al(0.5wt% Cu) interconnect. In: Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, (Eds.) Kerrow, A.; Lelu, J.; Kraft, O.; Kikkawa, T. Materials Research Society Symposium Proceedings. MRS, Warrendale, Pa. (2003) 107-114.
Barabash, R. I., W. Donner and H. Dosch: X-ray scattering from misfit dislocations in heteroepitaxial films: The case of Nb(110) on Al2O3. In: Applied Physics Letters 78, 4, 443-445 (2001).
http://edoc.mpg.de
The Max Planck Society does not take any responsibility for the content of this export.