Sobolev, N. A., D. Denisov, A. M. Emel'yanov, E. Shek, D. Kryzhkov, B. A. Andreev, Z. F. Krasil'nik, V. Vdovin, P. Werner and N. D. Zakharov: Erbium-doped silicon grown by molecular beam epitaxy. In: Proceedings of the 7th International Conference on Solid-State and Integrated Circuits Technology IEEE (2005) 2387-2390.
Cirlin, G. E., A. A. Tonkikh, V. E. Pticin, V. G. Dubrovskii, S. A. Masalov, V. P. Evtikhiev, D. Denisov, V. M. Ustinov and P. Werner: Sb impact on the morphology and properties of Ge/Si(100) quantum dots. In: Proceedings Nanophotonics 2004 Nauka (2004) 117-120.
The Max Planck Society does not take any responsibility for the content of this export.