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Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility.
Authors: Driussi, F.; Esseni, D.; Selmi, L.; Schmidt, M.; Lemme, M. C.; Kurz, H.; Buca, D.; Mantl, S.; Luysberg, M.; Loo, R.; Nguyen, D.; Reiche, M.
Date of Publication (YYYY-MM-DD): 2007
Title of Proceedings: Proceedings of the 37th European Solid-State Device Reseach Conference (ESSDERC 2007)
Start Page: 315
End Page: 318
Document Type: Conference-Paper
ID: 350320.0

From thin relaxed SiGe buffer layers to strained silicon directly on
Authors: Mantl, S.; Buca, D.; Holländer, B.; Lenk, S.; Hueging, N.; Luysberg, M.; Carius, R.; Loo, R.; Caymax, M.; Schäfer, H.; Radu, I.; Reiche, M.; Christiansen, S. H.; Gösele, U.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: ECS Transactions
Volume: 3
Issue / Number: 7
Start Page: 1047
End Page: 1055
Document Type: Article
ID: 312797.0