Li, C., T. Winzer, A. Walsh, B. Yan, C. Stampfl and A. Soon: Stacking-dependent energetics and electronic structure of ultrathin polymorphic V2VI3 topological insulator nanofilms. In: Physical Review B 90, 7, Seq. No.: 075438 (2014).
doi: 10.1103/PhysRevB.90.075438
Cui, X. Y., D. J. Carter, M. Fuchs, B. Delley, S. H. Wei, A. J. Freeman and C. Stampfl: Continuously tunable bandgap in GaN/AlN (0001) superlattices via built-in electric field. In: Physical Review B 81, 15, 155301-1-155301-5 (2010).
url: http://dx.doi.org/10.1103/PhysRevB.81.155301
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Scheffler, M. and C. Stampfl: Theory of adsorption on metal substrates. In: Handbook of Surface Science: Electronic Structure 2, 286-356 (2000).
Van de Walle, C. G., J. Neugebauer and C. Stampfl: Native defects, impurities, and doping in GaN and related compounds: general remarks. In: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors 23, 275-280 (1999).
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