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Stacking-dependent energetics and electronic structure of ultrathin polymorphic V2VI3 topological insulator nanofilms
Authors: Li, C.; Winzer, T.; Walsh, A.; Yan, B.; Stampfl, C.; Soon, A.
Date of Publication (YYYY-MM-DD): 2014-08-29
Title of Journal: Physical Review B
Volume: 90
Issue / Number: 7
Sequence Number of Article: 075438
Document Type: Article
ID: 701914.0


Continuously tunable bandgap in GaN/AlN (0001) superlattices
via built-in electric field
Authors: Cui, X. Y.; Carter, D. J.; Fuchs, Martin; Delley, B.; Wei, S. H.; Freeman, A. J.; Stampfl, C.
Date of Publication (YYYY-MM-DD): 2010-04-01
Title of Journal: Physical Review B
Volume: 81
Issue / Number: 15
Start Page: 155301-1
End Page: 155301-5
Document Type: Article
ID: 463984.0


Nitrogen adsorption and thin surface nitrides on Cu(111) from first-principles
Authors: Soon, A.; Wong, L.; Lee, M.; Todorova, M.; Delley, B.; Stampfl, C.
Date of Publication (YYYY-MM-DD): 2007-07-21
Title of Journal: Surface Science
Volume: 601
Start Page: 4775
End Page: 4785
Document Type: Article
ID: 327432.0


Order-disorder phase transitions: a DFT- (Wang-Landau) MC study
Authors: Todorova, M.; Borg, M.; Stampfl, C.; Scheffler, M.
(Start) Date of Conference/Meeting
(YYYY-MM-DD):
 2007-03-26
Name of Conference/Meeting: Spring meeting of the German Physical Society (DPG)
Place of Conference/Meeting: Regensburg, Germany
Document Type: Talk at Event
ID: 327428.0


Theory of adsorption on metal substrates
Editors: Horn, K.
Authors: Scheffler, M.; Stampfl, C.
Date of Publication (YYYY-MM-DD): 2000
Title of Journal: Handbook of Surface Science: Electronic Structure
Volume: 2
Start Page: 286
End Page: 356
Document Type: Article
ID: 2479.1


Native defects, impurities, and doping in GaN and related compounds: general remarks
Editors: Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Authors: Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.
Date of Publication (YYYY-MM-DD): 1999
Title of Journal: EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume: 23
Start Page: 275
End Page: 280
Document Type: Article
ID: 2451.1