Novák, J., V. Holý, J. Stangl, G. Bauer, E. Wintersberger, S. Kiravittaya and O. G. Schmidt: A method for the characterization of strain fields in buried quantum dots using x-ray standing waves. In: Journal of Physics D 38, A137-A142 (2005).
Schulli, T. U., M. Stoffel, A. Hesse, J. Stangl, R. T. Lechner, E. Wintersberger, M. Sztucki, T. H. Metzger, O. G. Schmidt and G. Bauer: Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping. In: Physical Review B 71, 3, Seq. No.: 035326 (2005).
Stangl, J., T. Schülli, A. Hesse, V. Holý, G. Bauer, M. Stoffel and O. G. Schmidt: Structural properties of semiconductor nanostructures from x-ray scattering. In: Advances in Solid State Physics 44, 227-240 (2004).
Kirfel, O., E. Müller, D. Grützmacher, K. Kern, A. Hesse, J. Stangl, V. Holý and G. Bauer: Shape and composition change of Ge dots due to Si capping. In: Applied Surface Science 224, 139-142 (2004).
Stangl, J., A. Hesse, V. Holý, Z. Zhong, G. Bauer, U. Denker and O. G. Schmidt: Effect of overgrowth temperature on shape, strain, and composition of buried Ge islands deduced from x-ray diffraction. In: Applied Physics Letters 82, 14, 2251-2253 (2003).
Stangl, J., A. Hesse, V. Holý, G. Bauer, U. Denker, O. G. Schmidt, O. Kirfel and D. Grützmacher: Structural properties of SiGe islands: Effect of capping. In: Materials Research Society Symposium Proceedings 749, 403-406 (2003).
Hesse, A., J. Stangl, V. Holý, T. Roch, G. Bauer, O. G. Schmidt, U. Denker and B. Struth: Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001). In: Physical Review B 66, 8, Seq. No.: 085321 (2002).
Meduňa, M., V. Holý, J. Stangl, A. Hesse, T. Roch, G. Bauer, O. G. Schmidt and K. Eberl: Non-specular X-ray reflection from self-organized ripple structures in Si/Ge multilayers. In: Physica E 13, 2-4, 1003-1007 (2002).
Stangl, J., A. Daniel, V. Holý, T. Roch, G. Bauer, I. Kegel, T. H. Metzger, T. Wiebach, O. G. Schmidt and K. Eberl: Strain and composition distribution in uncapped SiGe islands from x-ray diffraction. In: Applied Physics Letters 79, 1474-1476 (2001).
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Stangl, J., T. Roch, G. Bauer, I. Kegel, T. H. Metzger, O. G. Schmidt, K. Eberl, O. Kienzle and F. Ernst: Vertical correlation of SiGe islands in SiGe/Si superlattices: X-ray diffraction versus transmission electron microscopy. In: Applied Physics Letters 77, 3953-3955 (2000).
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