Moors, E. J., A. Groot, H. Biemans, C. T. van Scheltinga, C. Siderius, M. Stoffel, C. Huggel, A. Wiltshire, C. Mathison, J. Ridley, D. Jacob, P. Kumar, S. Bhadwal, A. Gosain and D. N. Collins: Adaptation to changing water resources in the Ganges basin, northern India. In: Environmental Science and Policy, Seq. No.: Online First, accepted (2011).
doi: 10.1016/j.envsci.2011.03.005
Malachias, A., M. Stoffel, M. Schmidbauer, T. U. Schulli, G. Medeiros-Ribeiro, O. G. Schmidt, R. Magalhaes-Paniago and T. H. Metzger: Atomic ordering dependence on growth method in Ge:Si(001) islands: Influence of surface kinetic and thermodynamic interdiffusion mechanisms. In: Physical Review B 82, 3, Seq. No.: 035307 (2010).
Malachias, A., T. H. Metzger, M. Stoffel, O. G. Schmidt and V. Holý: Composition and atomic ordering of Ge/Si(001) wetting layers. In: Thin Solid Films 515, 14, 5587-5592 (2007).
Marzegalli, A., V. A. Zinovyev, F. Montalenti, A. Rastelli, M. Stoffel, T. Merdzhanova, O. G. Schmidt and L. Miglio: Critical shape and size for dislocation nucleation in Si1-xGex islands on Si(001). In: Physical Review Letters 99, 23, Seq. No.: 235505 (2007).
Katsaros, G., A. Rastelli, M. Stoffel, G. Isella, H. von Känel, A. M. Bittner, J. Tersoff, U. Denker, O. G. Schmidt, G. Costantini and K. Kern: Investigating the lateral motion of SiGe islands by selective chemical etching. In: Surface Science 600, 2608-2613 (2006).
Merdzhanova, T., S. Kiravittaya, A. Rastelli, M. Stoffel, U. Denker and O. Schmidt: Dendrochronology of strain-relaxed islands. In: Physical Review Letters 96, 22, Seq. No.: 226103 (2006).
Stoffel, M., J. Zhang and O. G. Schmidt: Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates. In: IEICE Transactions on Electronics E89-C, 7, 921-925 (2006).
Katsaros, G., A. Rastelli, M. Stoffel, G. Costantini, O. G. Schmidt, K. Kern, J. Tersoff, E. Müller and H. von Känel: Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. In: Applied Physics Letters 89, 25, Seq. No.: 253105 (2006).
Stoffel, M., A. Rastelli, J. Tersoff, T. Merdzhanova and O. G. Schmidt: Local equilibrium and global relaxation of strained SiGe/Si(001) layers. In: Physical Review B 74, 15, Seq. No.: 155326 (2006).
Stoffel, M., A. Rastelli, T. Merdzhanova, G. S. Kar and O. G. Schmidt: Morphological evolution and lateral ordering of uniform SiGe/Si(001) islands. In: Microelectronics Journal 37, 1528-1531 (2006).
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