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Investigating the lateral motion of SiGe islands by selective chemical etching
Authors: Katsaros, G.; Rastelli, A.; Stoffel, M.; Isella, G.; von Känel, H.; Bittner, A. M.; Tersoff, J.; Denker, U.; Schmidt, O. G.; Costantini, G.; Kern, K.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Surface Science
Volume: 600
Start Page: 2608
End Page: 2613
Document Type: Article
ID: 286851.0


Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping
Authors: Katsaros, G.; Rastelli, A.; Stoffel, M.; Costantini, G.; Schmidt, O. G.; Kern, K.; Tersoff, J.; Müller, E.; von Känel, H.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Applied Physics Letters
Volume: 89
Issue / Number: 25
Sequence Number of Article: 253105
Document Type: Article
ID: 306006.0


Reading the footprints of strained islands
Authors: Rastelli, A.; Stoffel, M.; Katsaros, G.; Tersoff, J.; Denker, U.; Merdzhanova, T.; Kar, G. S.; Costantini, G.; Kern, K.; von Känel, H.; Schmidt, O. G.
Date of Publication (YYYY-MM-DD): 2006
Title of Journal: Microelectronics Journal
Volume: 37
Start Page: 1471
End Page: 1476
Document Type: Article
ID: 306216.0


Pyramids and domes in the InAs/GaAs(001) and Ge/Si(001) systems
Authors: Costantini, G.; Rastelli, A.; Manzano, C.; Acosta-Diaz, P.; Katsaros, G.; Songmuang, R.; Schmidt, O. G.; von Känel, H.; Kern, K.
Date of Publication (YYYY-MM-DD): 2005
Title of Journal: Journal of Crystal Growth
Volume: 278
Issue / Number: 1-4
Start Page: 38
End Page: 45
Document Type: Article
ID: 244352.0


Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001)
Authors: Montalenti, F.; Raiteri, P.; Migas, D. B.; von Känel, H.; Rastelli, A.; Manzano, C.; Costantini, G.; Denker, U.; Schmidt, O. G.; Kern, K.; Miglio, L.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Physical Review Letters
Volume: 93
Sequence Number of Article: 216102
Document Type: Article
ID: 213132.0


Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs/GaAs(001) and Ge/Si(001)
Authors: Costantini, G.; Rastelli, A.; Manzano, C.; Songmuang, R.; Schmidt, O. G.; Kern, K.; von Känel, H.
Date of Publication (YYYY-MM-DD): 2004
Title of Journal: Applied Physics Letters
Volume: 85
Issue / Number: 23
Start Page: 5673
End Page: 5675
Document Type: Article
ID: 217201.0