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          Document History for Document ID 2451

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Document Version Version Comment Date Status
2451.1 [No comment] Released
2451.0 [No comment]

ID: 2451.1, Fritz-Haber-Institut / Theory
Native defects, impurities, and doping in GaN and related compounds: general remarks
Authors:Van de Walle, C. G.; Neugebauer, J.; Stampfl, C.
Editors:Edgar, J.; Strite, S.; Akasaki, I.; Amano, H.; Wetzel, C.
Date of Publication (YYYY-MM-DD):1999
Title of Journal:EMIS Datareview Series: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
Volume:23
Start Page:275
End Page:280
Review Status:not specified
Audience:Not Specified
Document Type:Article
Communicated by:Matthias Scheffler