Document History for Document ID 306010
MPI für Festkörperforschung / FKF Publikationen 2006 |
|Magnetopolaron effect on shallow donors in GaN|
|Authors:||Wysmołek, A.; Stępniewski, R.; Potemski, M.; Chwalisz-Pietka, B.; Pakula, K.; Baranowski, J. M.; Look, D. C.; Park, S. S.; Lee, K. Y.|
|Date of Publication (YYYY-MM-DD):||2006|
|Title of Journal:||Physical Review B|
|Issue / Number:||19|
|Sequence Number of Article:||195205|
|Abstract / Description:||Resonant interaction between longitudinal-optic (LO) phonons and
electrons bound on shallow donors in GaN is studied using
magnetoluminescence of neutral-donor bound excitons ((DX)-X-0). The
experiments were performed on high-quality freestanding GaN material
and heteroepitaxial GaN layers grown on sapphire. In addition to the
principal recombination channel of (DX)-X-0, in which donors are left
in their ground states, two-electron satellites (TES) involving
different excited donor excitations, as well as replicas of the
principal (DX)-X-0 transition due to LO phonons, were observed for the
oxygen and silicon donors. In order to separate transitions involving
ground and excited (DX)-X-0 states, variable-temperature experiments
were performed. The application of high magnetic fields allows tuning
of the donor excitations into resonance with the LO phonon energy. This
results in a strong enhancement of TES intensity and the appearance of
several anticrossing processes in the vicinity of a LO phonon replica
of the principal (DX)-X-0 transition. The observed behavior is
explained in terms of a resonant interaction between LO phonons and
donor-bound electrons (magnetopolaron effect). The experimental data
are described using a phenomenological model that combines the theory
of a hydrogen atom in a magnetic field with a model which includes the
effects of nonparabolicity, nonresonant polaron corrections, and the
resonant magnetopolaron effect on electrons bound to donors. It was
found that the interaction in the resonant magnetopolaron regime is
stronger for the oxygen than for the silicon donor.
|External Publication Status:||published|
|Communicated by:||N. N.|
|Affiliations:||MPI für Festkörperforschung|
|External Affiliations:||Warsaw Univ, Inst Expt Phys, PL-00681 Warsaw, Poland.
; CNRS, Grenoble High Magnet Fields Lab, F-38042 Grenoble 9, France.
; MPI, F-38042 Grenoble 9, France.
; Wright State Univ, Semicond Res Ctr, Wright Patterson AFB, OH 45433 USA.
; AF Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA.
; Samsung Adv Inst Technol, Suwon, South Korea.
|Identifiers:||ISI:000242409200072 [ID No:1] |
ISSN:1098-0121 [ID No:2]